DUAL DEPLETIN CMOS (D²CMOS) STATIC MEMORY CELL.TAKAGI H; KANO G.1977; I.E.E.E.J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1977; VOL. 12; NO 4; PP. 424-426; BIBL. 8 REF.Article

COMPLEMENTARY JFET NEGATIVE-RESISTANCE DEVICES.TAKAGI H; KANO G.1975; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1975; VOL. 10; NO 6; PP. 509-515; BIBL. 5 REF.Article

A NEW LAMBDA -TYPE NEGATIVE RESISTANCE DEVICE OF INTEGRATED COMPLEMENTARY FET STRUCTURE.KANO G; IWASA H.1974; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1974; VOL. 21; NO 7; PP. 448-449; BIBL. 4 REF.Article

A NEW-TWO-TERMINAL C-MNOS MEMORY CELL.KOIKE S; KANO G; KASHIWAKURA A et al.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; SUPPL. 1; PP. 201-204; BIBL. 4 REF.; (CONF. SOLID STATE DEVICES. 8. PROC.; TOKYO; 1976)Conference Paper

VAPOR PHASE EQUILIBRIA OF ARSENIC-TRIOXIDE OVER GALLIUM ARSENIDETERAMOTO I; TAKAGI H; KANO G et al.1979; JAP. J. APPL. PHYS.; JPN; DA. 1979; VOL. 18; NO 4; PP. 723-728; BIBL. 15 REF.Article

LIGHT-CONTROLLED ANODIC OXIDATION OF N-GAAS AND ITS APPLICATION TO PREPARATION OF SPECIFIED ACTIVE LAYERS FOR MESFET'SSHIMANO A; TAKAGI H; KANO G et al.1979; I.E.E.E. TRANS ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 11; PP. 1690-1695; BIBL. 16 REF.Article

THERMAL OXIDATION OF GAAS IN ARSENIC TRIOXIDE VAPOR.TAKAGI H; KANO G; TERAMOTO I et al.1978; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1978; VOL. 125; NO 4; PP. 579-581; BIBL. 8 REF.Article

A LOW-NOISE DUAL-GATE GAAS MESFET FOR UHF TV TUNERNAMBU S; HAGIO M; NAGASHIMA A et al.1982; IEEE JOURNAL OF SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1982; VOL. 17; NO 4; PP. 648-653; BIBL. 8 REF.Article

A NEW HETEROJUNCTION-GATE GAAS FET.UMEBACHI S; ASAHI K; NAGASHIMA A et al.1976; JAP. J. APPL. PHYS.; JAP.; DA. 1976; VOL. 15; SUPPL. 1; PP. 157-161; BIBL. 4 REF.; (CONF. SOLID STATE DEVICES. 7. PROC.; TOKYO; 1975)Conference Paper

THEORY OF NEGATIVE RESISTANCE OF JUNCTION FIELD-EFFECT TRANSISTORS.MIZUNO H; KANO G; TAKAGI H et al.1976; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1976; VOL. 11; NO 2; PP. 313-317; BIBL. 8 REF.Article

THE LAMBDA DIODE: A VERSATILE NEGATIVE-RESISTANCE DEVICE.KANO G; IWASA H; TAGAGI H et al.1975; ELECTRONICS; U.S.A.; DA. 1975; VOL. 48; NO 13; PP. 105-109Article

STRUCTURE POREUSE DU PRODUIT DE CARBONISATION DU PVC ACTIVE PAR LE GAZ NH₃KANO G; HORITA K; OSHITANI M et al.1974; NIPPON KAGAKU KAISHI; JAP.; DA. 1974; NO 11; PP. 2052-2058; ABS. ANGL.; BIBL. 15 REF.Article

Preparation and electrical conductivity of binary rare earth metal fluoride oxidesTAKASHIMA, M; KANO, G.Solid state ionics. 1987, Vol 23, Num 1-2, pp 99-106, issn 0167-2738Article

Heat treatment effects on an In-GaAs ohmic contactOTSUKI, T; AOKI, H; TAKAGI, H et al.Journal of applied physics. 1988, Vol 63, Num 6, pp 2011-2014, issn 0021-8979Article

Fluorination of the superconducting oxide YBCO with elementary fluorineTAKASHIMA, M; AMAYA, M; KANO, G et al.Journal of fluorine chemistry. 1990, Vol 46, Num 1, pp 7-19, issn 0022-1139Article

Design and fabrication of a GaAs monolithic operational amplifierSHIN-ICHI KATSU; KAZUMURA, M; KANO, G et al.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 7, pp 831-838, issn 0018-9383Article

A new self-align technology for GaAs analog MMIĆ'sHAGIO, M; KATSU, S; KAZUMURA, M et al.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 6, pp 754-758, issn 0018-9383Article

12-GHz-band GaAs MMIC mixer using a dual-gate FET with reduced output impedanceKANAZAWA, K; HAGIO, M; KAZUMURA, M et al.Transactions of the Institute of Electronics and Communication Engineers of Japan. Section E. 1988, Vol 71, Num 1, pp 72-76, issn 0387-236XArticle

A source coupled FET logic: a new current-mode approach to GaAs logicsKATSU, S; NAMBU, S; SHIMANO, A et al.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 6, pp 1114-1118, issn 0018-9383Article

Reaction between the superconducting oxide YBCO and ammonium bifluorideTAKASHIMA, M; KUMATORIYA, M; TACHIBANA, S et al.Journal of fluorine chemistry. 1990, Vol 46, Num 2, pp 211-219, issn 0022-1139, 9 p.Article

A new vertical power MOSFET structure with extremely reduced ON-resistanceUEDA, D; TAKAGI, H; KANO, G et al.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 1, pp 2-6, issn 0018-9383Article

Device for quick evaluation of Meissner effectTAKASHIMA, M; KUMATORIYA, M; FUKAMI, S et al.Japanese journal of applied physics. 1989, Vol 28, Num 12, pp 2631-2632, issn 0021-4922, 1Article

A GaAs double-balanced dual-gate FET mixer IC for UHF receiver front-end applicationsKANAZAWA, K; KAZUMURA, M; NAMBU, S et al.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 12, pp 2717-2723, issn 0018-9383Article

A laser-recrystallization technique for silicon-TFT integrated circuits on quartz substrates and its application to small-size monolithic active matrix LCD'sFUJII, E; SENDA, K; EMOTO, F et al.I.E.E.E. transactions on electron devices. 1990, Vol 37, Num 1, pp 121-127, issn 0018-9383, 7 p.Article

Recrystallization mechanism for solid phase growth of poly-Si films on quartz substratesNAKAMURA, A; EMOTO, F; FUJII, E et al.Japanese journal of applied physics. 1988, Vol 27, Num 12, pp L2408-L2410, issn 0021-4922, 2Article